@misc{indiciaeaa2b21593ba2,
  title = {Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current},
  author = {Ber, B Ya and Bogdanova, E V and Zakgeim, A L and Kazanzev, D Yu and Kartashova, A P and Pavluchenko, A S and Chernyakov, A E and Shabunina, E I and Shmidt, N M and Yakimov, E B},
  year = {2011},
  doi = {10.1134/s1063782611030079},
  url = {https://www.osti.gov/biblio/22004842},
  note = {Source identifier: 22004842}
}