TY  - RPRT
TI  - Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current
AU  - Ber, B Ya
AU  - Bogdanova, E V
AU  - Zakgeim, A L
AU  - Kazanzev, D Yu
AU  - Kartashova, A P
AU  - Pavluchenko, A S
AU  - Chernyakov, A E
AU  - Shabunina, E I
AU  - Shmidt, N M
AU  - Yakimov, E B
PY  - 2011
DO  - 10.1134/s1063782611030079
UR  - https://www.osti.gov/biblio/22004842
ID  - 22004842
ER  -