@misc{indiciaecc0cd55b8d14,
  title = {Improving Electrical Performance of GaN-on-GaN MOS Devices Via Optimized Atomic Layer Deposition of Al2O3 Gate Dielectrics},
  author = {Glaser, Caleb E. and Rummel, Brian Douglas and Klesko, Joseph Peter and Dickens, Peter Thomas and Binder, Andrew and Kaplar, Robert and Feezell, Daniel},
  year = {2023},
  doi = {10.2172/2430821},
  url = {https://www.osti.gov/biblio/2430821},
  note = {Source identifier: 2430821}
}