@misc{indiciae366e756c7226,
  title = {Using ground state and excited state density functional theory to decipher 3d dopant defects in GaN},
  author = {Schultz, Peter A. (ORCID:0000000201799710) and Lutz, Jesse J. (ORCID:000000030296405X)},
  year = {2024},
  doi = {10.1088/1361-648x/ad7fb1},
  url = {https://www.osti.gov/biblio/2466295},
  note = {Source identifier: 2466295}
}