@misc{indiciae61cc09661843,
  title = {Computationally guided experimental validation of divacancy defect formation in 4H-SiC},
  author = {Kimura, Taishi [Univ. of Michigan, Ann Arbor, MI (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)] (ORCID:0000000212841814) and Ahn, Jonghoon [Argonne National Laboratory (ANL), Argonne, IL (United States)] (ORCID:000000023246143X) and Delegan, Nazar [Argonne National Laboratory (ANL), Argonne, IL (United States)] (ORCID:0000000212406409) and Dibos, Alan [Argonne National Laboratory (ANL), Argonne, IL (United States)] (ORCID:0000000159351364) and Zhang, Jiefei [Argonne National Laboratory (ANL), Argonne, IL (United States)] (ORCID:0000000273293110) and Pingault, Benjamin [Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)] (ORCID:0000000312592747) and Zhang, Cunzhi [Univ. of Chicago, IL (United States)] (ORCID:000000024562535X) and Galli, Giulia [Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)] (ORCID:0000000280015290) and Awschalom, David [Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)] (ORCID:0000000285912687) and Heremans, F. Joseph [Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)] (ORCID:0000000333377958)},
  year = {2025},
  doi = {10.1063/5.0255575},
  url = {https://www.osti.gov/biblio/2562222},
  note = {Source identifier: 2562222}
}