@misc{indiciae518adc9f730d,
  title = {Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV},
  author = {Guo, Yijin [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)] and Qin, Yuan [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)] (ORCID:0000000246913097) and Xiao, Ming [Xidian Univ., Xi’an (China)] (ORCID:0000000190726371) and Porter, Matthew [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)] (ORCID:0009000230918333) and Song, Qihao [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)] (ORCID:0000000313765814) and Popa, Daniel [Cambridge GaN Devices Ltd. (United Kingdom)] and Efthymiou, Loizos [Cambridge GaN Devices Ltd. (United Kingdom)] and Cheng, Kai [Enkris Semiconductor Inc., Suzhou (China)] and Kravchenko, Ivan [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)] (ORCID:0000000349995822) and Shao, Linbo [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)] (ORCID:0000000206157848) and Wang, Han [Univ. of Hong Kong, Pokfulam (Hong Kong)] and Udrea, Florin [Cambridge GaN Devices Ltd. (United Kingdom)] (ORCID:0000000272883370) and Zhang, Yuhao [Univ. of Hong Kong, Pokfulam (Hong Kong)] (ORCID:0000000163504861)},
  year = {2025},
  doi = {10.1109/led.2025.3539175},
  url = {https://www.osti.gov/biblio/2573367},
  note = {Source identifier: 2573367}
}