TY  - RPRT
TI  - Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV
AU  - Guo, Yijin [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)]
AU  - Qin, Yuan [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)] (ORCID:0000000246913097)
AU  - Xiao, Ming [Xidian Univ., Xi’an (China)] (ORCID:0000000190726371)
AU  - Porter, Matthew [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)] (ORCID:0009000230918333)
AU  - Song, Qihao [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)] (ORCID:0000000313765814)
AU  - Popa, Daniel [Cambridge GaN Devices Ltd. (United Kingdom)]
AU  - Efthymiou, Loizos [Cambridge GaN Devices Ltd. (United Kingdom)]
AU  - Cheng, Kai [Enkris Semiconductor Inc., Suzhou (China)]
AU  - Kravchenko, Ivan [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)] (ORCID:0000000349995822)
AU  - Shao, Linbo [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)] (ORCID:0000000206157848)
AU  - Wang, Han [Univ. of Hong Kong, Pokfulam (Hong Kong)]
AU  - Udrea, Florin [Cambridge GaN Devices Ltd. (United Kingdom)] (ORCID:0000000272883370)
AU  - Zhang, Yuhao [Univ. of Hong Kong, Pokfulam (Hong Kong)] (ORCID:0000000163504861)
PY  - 2025
DO  - 10.1109/led.2025.3539175
UR  - https://www.osti.gov/biblio/2573367
ID  - 2573367
ER  -