@misc{indiciae26773b4753cc,
  title = {Strain engineering of doped hydrogen passivated silicon quantum dots},
  author = {Ghosh, Swarnava [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)] (ORCID:0000000338005264) and Eisenbach, Markus [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)] (ORCID:0000000188058327)},
  year = {2025},
  doi = {10.1038/s41598-025-04532-0},
  url = {https://www.osti.gov/biblio/2573515},
  note = {Source identifier: 2573515}
}