@misc{indiciaea26c370fa269,
  title = {Programmable Cryogenic Memory in a Ge/GeSi Heterostructure},
  author = {Bradicich, Adelaide [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000239772126) and Lu, Tzu‐Ming [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000233631226)},
  year = {2025},
  doi = {10.1002/aelm.202500102},
  url = {https://www.osti.gov/biblio/2583880},
  note = {Source identifier: 2583880}
}