@misc{indiciaef1a3beae7566,
  title = {Charge Trap Layer Supercharging for Improved Bit Reliability in 3-D NAND Flash Under Proton Irradiation},
  author = {Breeding, Matthew Luel [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000196375840) and Teijeiro, Antonio Emilio [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] and Hughart, David Russell [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000325862494) and Young, Joshua Michael [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000284990368) and Black, Dolores Archuleta [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000252823506) and Black, Jeffrey D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000330587992) and Wilcox, Edward P. [NASA Goddard Space Flight Center (GSFC), Greenbelt, MD (United States)] (ORCID:0000000179971309)},
  year = {2025},
  doi = {10.1109/tns.2025.3549487},
  url = {https://www.osti.gov/biblio/2585645},
  note = {Source identifier: 2585645}
}