@misc{indiciaecc3be5052bec,
  title = {Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance},
  author = {Stepanoff, Sergei Pavlovich [Pennsylvania State Univ., University Park, PA (United States)] and Khachatrian, Ani [Naval Research Laboratory (NRL), Washington, DC (United States)] and Al-Mamun, Nahid Sultan [Pennsylvania State Univ., University Park, PA (United States)] and Camino, Fernando [Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)] and Meyet, Jordan [Pennsylvania State Univ., University Park, PA (United States)] and Haque, Aman [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000165355484) and Ren, Fan [Univ. of Florida, Gainesville, FL (United States)] and Pearton, Stephen J. [Univ. of Florida, Gainesville, FL (United States)] and Wolfe, Douglas E. [Pennsylvania State Univ., University Park, PA (United States)]},
  year = {2025},
  doi = {10.1557/s43577-025-00934-7},
  url = {https://www.osti.gov/biblio/2587073},
  note = {Source identifier: 2587073}
}