@misc{indiciaee1554e16ee68,
  title = {Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET},
  author = {Duan, Jiahui [University of Notre Dame, IN (United States)] and Xu, Yixin [Pennsylvania State Univ., University Park, PA (United States)] and Zhao, Zijian [University of Notre Dame, IN (United States)] and Lu, Anni [Georgia Institute of Technology, Atlanta, GA (United States)] and Read, James [Georgia Institute of Technology, Atlanta, GA (United States)] and Imani, Mohsen [Univ. of California, Irvine, CA (United States)] and Kampfe, Thomas [Fraunhofer Inst. for Photonic Microsystems (IPMS) (Germany)] and Niemier, Mike [University of Notre Dame, IN (United States)] and Gong, Xiao [National Univ. of Singapore (Singapore)] and Yu, Shimeng [Georgia Institute of Technology, Atlanta, GA (United States)] and Narayanan, Vijaykrishnan [Pennsylvania State Univ., University Park, PA (United States)] and Ni, Kai [University of Notre Dame, IN (United States)]},
  year = {2024},
  doi = {10.1109/iedm50854.2024.10873305},
  url = {https://www.osti.gov/biblio/2974633},
  note = {Source identifier: 2974633}
}