@misc{indiciaefe8c34b203e6,
  title = {DEVELOPMENT AND APPLICATION OF DEEP-LEVEL SPECTROSCOPY SYSTEMS FOR CHARACTERIZING IRRADIATION-INDUCED TRAPS IN GALLIUM NITRIDE SCHOTTKY DIODES},
  author = {Hodgson, Donald Edwin [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0009000546967414)},
  year = {2025},
  url = {https://www.osti.gov/biblio/3013864},
  note = {Source identifier: 3013864}
}