TY  - RPRT
TI  - DEVELOPMENT AND APPLICATION OF DEEP-LEVEL SPECTROSCOPY SYSTEMS FOR CHARACTERIZING IRRADIATION-INDUCED TRAPS IN GALLIUM NITRIDE SCHOTTKY DIODES
AU  - Hodgson, Donald Edwin [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0009000546967414)
PY  - 2025
UR  - https://www.osti.gov/biblio/3013864
ID  - 3013864
ER  -