@misc{indiciaece8abedbae1c,
  title = {High-performance nanodevices based on WGe 2⁢ N 4 monolayer},
  author = {Li, Jiajun [Henan Normal University, Xinxiang (China)] and Fan, Xiaozheng [Henan Normal University, Xinxiang (China)] and Shiri, Mehrdad [University of Miami, Coral Gables, FL (United States)] and Wang, Kun [University of Miami, Coral Gables, FL (United States)] (ORCID:000000024907310X) and Ma, Chunlan [Suzhou University of Science and Technology (China)] and Gong, Shijing [East China Normal University, Shanghai (China)] and Zhao, Chuanxi [Jinan University, Guangzhou (China)] and Wang, Junshuai [Henan Normal University, Xinxiang (China)] and Dong, Xiao [Henan Normal University, Xinxiang (China)] and Wang, Tianxing [Henan Normal University, Xinxiang (China)] (ORCID:0000000336598801) and Xu, Guoliang [Henan Normal University, Xinxiang (China)] (ORCID:000000033701699X) and An, Yipeng [Henan Normal University, Xinxiang (China)] (ORCID:0000000154774659)},
  year = {2026},
  doi = {10.1103/74cd-586j},
  url = {https://www.osti.gov/biblio/3013906},
  note = {Source identifier: 3013906}
}