@misc{indiciae6fb293cdff30,
  title = {Towards radiation hard (Hf, Zr)O2 based Ferroelectric Tunnel Junctions nonvolatile memory},
  author = {Henry, Michael David [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000252010644) and Stoltzfus, David Jay [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] and Tharpe, Troy Ryan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000178355651) and Jaszewski, Samantha Tomiko [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000249581219) and Young, Travis Ryan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0009000606276720) and Esteves, Giovanni [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000324317136) and Ihlefeld, Jon [University of Virginia, Materials Science and Engineering Department] and Lenox, Megan [University of Virginia, Materials Science and Engineering Department]},
  year = {2025},
  doi = {10.2172/3018876},
  url = {https://www.osti.gov/biblio/3018876},
  note = {Source identifier: 3018876}
}