@misc{indiciae059d748ebd59,
  title = {Understanding and Controlling Vanadium Doping and Sulfur Vacancy Behavior in Two-Dimensional Semiconductors: Toward Predictive Design},
  author = {Mathela, Shreya [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000290178149) and Yu, Zhuohang [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000315931054) and Ward, Zachary D. [Rensselaer Polytechnic Inst., Troy, NY (United States)] and Dihingia, Nikalabh [Pennsylvania State Univ., University Park, PA (United States)] and Sredenschek, Alex [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0009000411878107) and Sanchez, David [Pennsylvania State Univ., University Park, PA (United States)] and Munson, Kyle T. [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0009000160998349) and Houser, Elizabeth [Pennsylvania State Univ., University Park, PA (United States)] and Dimitrov, Edgar [Pennsylvania State Univ., University Park, PA (United States)] and Jain, Arpit [Pennsylvania State Univ., University Park, PA (United States)] and Reifsnyder Hickey, Danielle [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000289621473) and Terrones, Humberto [Rensselaer Polytechnic Inst., Troy, NY (United States)] (ORCID:0000000305150721) and Terrones, Mauricio [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000300102851) and Asbury, John B. [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000236417276)},
  year = {2025},
  doi = {10.1021/acsnano.5c10856},
  url = {https://www.osti.gov/biblio/3024342},
  note = {Source identifier: 3024342}
}