@misc{indiciae4fe4745b8241,
  title = {Securing 3D NAND Without Density Loss via In-Situ Encryption Using a Single Transistor XOR Cell},
  author = {Duan, Jiahui [University of Notre Dame, IN (United States)] and Ovy, Sanwar Ahmed [North Dakota State Univ., Fargo, ND (United States)] and Hsu, Po-Kai [Georgia Institute of Technology, Atlanta, GA (United States)] and Zhao, Zijian [University of Notre Dame, IN (United States)] and Kämpfe, Thomas [Fraunhofer Inst. for Photonic Microsystems, Dresden (Germany)] and Gong, Xiao [National Univ. of Singapore (Singapore)] and Yu, Shimeng [Georgia Institute of Technology, Atlanta, GA (United States)] and Narayanan, Vijaykrishnan [Pennsylvania State Univ., University Park, PA (United States)] and George, Sumitha [North Dakota State Univ., Fargo, ND (United States)] and Ni, Kai [University of Notre Dame, IN (United States)]},
  year = {2025},
  doi = {10.1109/iedm50572.2025.11353898},
  url = {https://www.osti.gov/biblio/3029552},
  note = {Source identifier: 3029552}
}