@misc{indiciae4f02c0921ba5,
  title = {Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F 2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation},
  author = {Deng, Shan [University of Notre Dame, IN (United States)] and Howe, John [University of Notre Dame, IN (United States)] and Ma, Sizhe [University of Notre Dame, IN (United States)] and Tauki, Sadik Yasir [Pennsylvania State Univ., University Park, PA (United States)] and Zhao, Zijian [University of Notre Dame, IN (United States)] and Duan, Jiahui [University of Notre Dame, IN (United States)] and Lee, YuShan [University of Notre Dame, IN (United States)] and Qin, Yixin [University of Notre Dame, IN (United States)] and Joshi, Rajiv [IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center] and Kampfe, Thomas [Fraunhofer Inst. for Photonic Microsystems, Dresden (Germany)] and Gong, Xiao [National Univ. of Singapore (Singapore)] and Narayanan, Vijaykrishnan [Pennsylvania State Univ., University Park, PA (United States)] and Ni, Kai [University of Notre Dame, IN (United States)]},
  year = {2025},
  doi = {10.23919/vlsitechnologyandcir65189.2025.11074964},
  url = {https://www.osti.gov/biblio/3029568},
  note = {Source identifier: 3029568}
}