@misc{indiciae9c0b115d9b62,
  title = {High-throughput spin-bath characterization of spin defects in semiconductors},
  author = {Poteshman, Abigail N. [University of Chicago, IL (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)] (ORCID:0000000248734826) and Onizhuk, Mykyta [University of Chicago, IL (United States)] and Egerstrom, Christopher [Argonne National Laboratory (ANL), Argonne, IL (United States); University of Chicago, IL (United States)] (ORCID:0000000182407303) and Mark, Daniel P. [Argonne National Laboratory (ANL), Argonne, IL (United States)] (ORCID:0000000212316016) and Awschalom, David D. [Argonne National Laboratory (ANL), Argonne, IL (United States); University of Chicago, IL (United States)] (ORCID:0000000285912687) and Heremans, F. Joseph [Argonne National Laboratory (ANL), Argonne, IL (United States); University of Chicago, IL (United States)] and Galli, Giulia [Argonne National Laboratory (ANL), Argonne, IL (United States); University of Chicago, IL (United States)] (ORCID:0000000280015290)},
  year = {2025},
  doi = {10.1103/p57x-8kk7},
  url = {https://www.osti.gov/biblio/3363843},
  note = {Source identifier: 3363843}
}