@misc{indiciaecf04405a787f,
  title = {Uranium Doped Gallium Nitride Epitaxial Thin Films},
  author = {Fix, J. Pierce [Idaho National Laboratory (INL), Idaho Falls, ID (United States); Montana State University, Bozeman, MT (United States)] and Regmi, Sabin [Idaho National Laboratory (INL), Idaho Falls, ID (United States)] (ORCID:0000000213713101) and Penders, Aaron G. [Idaho National Laboratory (INL), Idaho Falls, ID (United States)] (ORCID:0000000215886532) and Shah, Sohail [Idaho National Laboratory (INL), Idaho Falls, ID (United States)] and Vallejo, Kevin Daniel [Idaho National Laboratory (INL), Idaho Falls, ID (United States)] (ORCID:0000000294566288) and Buturlim, Volodymyr Borysovych [Idaho National Laboratory (INL), Idaho Falls, ID (United States)] (ORCID:0000000188512489) and Rifore, Belief [Montana State University, Bozeman, MT (United States)] and Gofryk, Krzysztof [Idaho National Laboratory (INL), Idaho Falls, ID (United States)] (ORCID:0000000286816857) and Bachhav, Mukesh [Idaho National Laboratory (INL), Idaho Falls, ID (United States)] (ORCID:0000000181046032) and Borys, Nicholas J. [Montana State University, Bozeman, MT (United States); University of Utah, Salt Lake City, UT (United States)] (ORCID:0000000154341191) and May, Brelon J. [Idaho National Laboratory (INL), Idaho Falls, ID (United States)] (ORCID:0000000237317592)},
  year = {2026},
  doi = {10.1002/aelm.202500730},
  url = {https://www.osti.gov/biblio/3364523},
  note = {Source identifier: 3364523}
}