@misc{indiciae68012557981b,
  title = {Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor},
  author = {Nandi, Soumak [Univ. of Illinois at Urbana-Champaign, IL (United States)] (ORCID:0009000703804409) and White, Ethan [Univ. of Illinois at Urbana-Champaign, IL (United States)] and Shao, Qinghui [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000219949553) and Chatterjee, Bikramjit [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000168891987) and Frye, Clint D. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000263708167) and Evans, Dylan M. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:000900064754500X) and Malakoutian, Mohamadali [Stanford Univ., CA (United States)] (ORCID:0000000257600408) and Chowdhury, Srabanti [Stanford Univ., CA (United States)] (ORCID:0000000183670461) and Voss, Lars [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000263498219) and Rakheja, Shaloo [Univ. of Illinois at Urbana-Champaign, IL (United States)] (ORCID:000000017501275X)},
  year = {2026},
  doi = {10.1002/pssa.70395},
  url = {https://www.osti.gov/biblio/3377736},
  note = {Source identifier: 3377736}
}