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NASA NTRS · 19640029936

Transit-time considerations in p-i-n diodes.

Abstract

Frequency response of p-i-n photodiode, taking account of mobility and nonuniform generation of carriers in i region

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BibTeXRIS

Emmons, R. B., Lucovsky, G., Schwarz, R. F.. 1964-03-01. Transit-time considerations in p-i-n diodes.. https://ntrs.nasa.gov/citations/19640029936

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