NASA NTRS · 19650000257
Increased junction lead inductance ballasts high-frequency transistors
Abstract
Segmentation of transistor bonding stripes and the inherent inductance of individual leads provides ballast for even current distribution across the junction of a high-frequency transistor.
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Gilbert, G. J.. 1965-09-01. Increased junction lead inductance ballasts high-frequency transistors. https://ntrs.nasa.gov/citations/19650000257
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