NASA NTRS · 19660000399
System for etching thick aluminum layers minimizes bridging and undercutting
Abstract
Four step photoresist process for etching thick aluminum layers for semiconductor device contacts produces uniform contact surfaces, eliminates bridging, minimizes undercutting, and may be used on various materials of any thickness.
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1966-09-01. System for etching thick aluminum layers minimizes bridging and undercutting. https://ntrs.nasa.gov/citations/19660000399
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