NASA NTRS · 19670000650
Development of reliability prediction technique for semiconductor diodes
Abstract
New fundamental technique of reliability prediction for semiconductor diodes based on realistic mathematical models can be applied to component failure rate prediction including mechanical degradation, electrical degradation, environmental stress factors, and electrical load stress factors.
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Ryerson, C. M.. 1967-12-01. Development of reliability prediction technique for semiconductor diodes. https://ntrs.nasa.gov/citations/19670000650
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