NASA NTRS · 19680011557
High-temperature-materials study
Abstract
Chemical vapor deposition of aluminum phosphides onto single crystals of silicon and gallium arsenide for producing high temperature operating solid state electronic devices
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Baxter, R. D., Reid, F. J., Stambaugh, E. P.. 1968-01-01. High-temperature-materials study. https://ntrs.nasa.gov/citations/19680011557
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