NASA NTRS · 19690000096
Silicon carbide diode for increased light output
Abstract
Transition metals improve the overall light output and the output in particular regions of the electroluminescent of a silicon carbide semiconductor device. These metals /impurities/ introduce levels that can be pumped electrically and affect the efficiency of the recombination process involved in emission of radiation.
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Griffiths, L. B., Mlavsky, A. I.. 1969-06-01. Silicon carbide diode for increased light output. https://ntrs.nasa.gov/citations/19690000096
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