NASA NTRS · 19700000265
Temperature-independent resistor for microelectronic circuits
Abstract
Heat treating insulating crystals in gaseous hydrogen atmosphere produce resistive device which is temperature-independent from 77 to 295 degrees K. Increasing the concentration of hydrogen within the crystal yields semiconductor, hybrid, and metallic conduction characteristics which are combined with a depletion layer at the surface.
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Aegerter, S., Libby, W. F.. 1970-05-01. Temperature-independent resistor for microelectronic circuits. https://ntrs.nasa.gov/citations/19700000265
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