NASA NTRS · 19700000479
New method for photoresist stripping
Abstract
Vacuum dehydration of negatively working photoresist eliminates trace contamination of conventional stripping methods. The semiconductor substrate is coated with photoresist, exposed, developed, cured, and etched, and then placed in a vacuum. Following dehydration, the resist film is removable with ordinary solvents.
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Davern, W. E., Tobin, L. S.. 1970-09-01. New method for photoresist stripping. https://ntrs.nasa.gov/citations/19700000479
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