NASA NTRS · 19710000035
Improved methods of forming monolithic integrated circuits having complementary bipolar transistors
Abstract
Two new processes form complementary transistors in monolithic semiconductor circuits, require fewer steps /infusions/ than previous methods, and eliminate such problems as nonuniform h sub FE distribution, low yield, and large device formation.
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Bohannon, R. O., Jr., Cashion, W. F., Stehlin, R. A.. 1971-02-01. Improved methods of forming monolithic integrated circuits having complementary bipolar transistors. https://ntrs.nasa.gov/citations/19710000035
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