NASA NTRS · 19710000345
Nonvolatile read/write memory element - A concept
Abstract
Bidirectional MOS driver, integrated with diode matrix reduces fuse read current to only that of junction leakage and transient MOS gate charging current. No current, except junction leakage current, flows in unaddressed cells. Current required to drive MOS gate flows through unfused branch only during read mode.
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Cricchi, J. R.. 1971-09-01. Nonvolatile read/write memory element - A concept. https://ntrs.nasa.gov/citations/19710000345
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