NASA NTRS · 19720000149
Gate protective device for insulated gate field-effect transistors
Abstract
Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region. Separation of layers is necessary to prevent shorting out junctions between alternating regions.
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Sunshine, R. A.. 1972-05-01. Gate protective device for insulated gate field-effect transistors. https://ntrs.nasa.gov/citations/19720000149
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