NASA NTRS · 19720000346
Overlap diffusion for increasing phototransistor dynamic range
Abstract
Construction of improved phototransistors to provide increased base-collector capacitance is described. Silicon or germanium semiconductor wafers are used as examples. Operation of transistors and electrical properties are discussed and illustrations of the devices are included.
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Mccann, D. H.. 1972-07-01. Overlap diffusion for increasing phototransistor dynamic range. https://ntrs.nasa.gov/citations/19720000346
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