NASA NTRS · 19720000754
Gate protective device for SOS array
Abstract
Protective gate device consisting of alternating heavily doped n(+) and p(+) diffusions eliminates breakdown voltages in silicon oxide on sapphire arrays caused by electrostatic discharge from person or equipment. Diffusions are easily produced during normal double epitaxial processing. Devices with nine layers had 27-volt breakdown.
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Meyer, J. E., Jr., Scott, J. H.. 1972-12-01. Gate protective device for SOS array. https://ntrs.nasa.gov/citations/19720000754
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