NASA NTRS · 19720005553
A CW Gunn diode bistable switching element
Abstract
A current-controlled bistable switching element using a CW Gunn diode is reported. Switching rates of the order of 10 MHz were obtained with modest circuits. Switching was initiated by current pulses of short duration (5 to 10 nsec). Rise times of the order of several nanoseconds could be obtained. The apparent mechanism which permits the bistable operation of the Gunn diode is the reduction in the mobility of the GaAs active layer due to heating of the device.
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Hurtado, M., Rosenbaum, F. J.. 1971-11-01. A CW Gunn diode bistable switching element. https://ntrs.nasa.gov/citations/19720005553
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