NASA NTRS · 19720009509
Development of reverse biased p-n junction electron emission
Abstract
A cold cathode emitter of hot electrons for use as a source of electrons in vacuum gauges and mass spectrometers was developed using standard Norton electroluminescent silicon carbide p-n diodes operated under reverse bias conditions. Continued development including variations in the geometry of these emitters was carried out such that emitters with an emission efficiency (emitted current/junction current) as high as 3 x 10-0.00001 were obtained. Pulse measurements of the diode characteristics were made and showed that higher efficiency can be attained under pulse conditions probably due to the resulting lower temperatures resulting from such operation.
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Fowler, P., Muly, E. C.. 1971-01-01. Development of reverse biased p-n junction electron emission. https://ntrs.nasa.gov/citations/19720009509
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