Photovoltage inversion effect and its application to semiconductor surface studies: CdS.

Abstract

Experimental results on the surface states of the basal plane of CdS are presented and discussed in the light of a model of the photovoltage inversion effect. It is found that the surface states associated with this effect are in poor communication with the bulk and under normal conditions may require long periods of time to reach equilibrium. A combination of photovoltage inversion, photovoltage quenching, and photovoltage spectroscopy is believed to constitute a very effective tool for the study of surfaces of wide energy gap semiconductors.