A microwave-biased millimeter- and submillimeter-wave detector using InSb.

Abstract

Description of a high-purity n-type indium antimonide sample mounted in a reentrant cavity, cooled to 4.2 K, and operated as a millimeter-wave detector. The scheme utilizes a down-conversion process, and free-carrier absorption is the mechanism responsible for the detection process. Power applied at the millimeter-wave frequency causes a change in the material conductivity, which in turn causes a change in the X-band power absorption. Cavity perturbation techniques are used to analyze the scheme. The detector was operated successfully at frequencies between 35 and 150 GHz with no long-wavelength or short-wavelength cutoff observed. The scheme offers a fast, highly sensitive, and rugged detector with low conversion loss.