NASA NTRS · 19720044858
Surface piezoelectric effect in non-centrosymmetric semiconductors - CdS.
Abstract
It was found that mechanical bending of CdS wafers with the (00.1) orientation causes pronounced changes in the contact potential difference. The changes were of the order of one volt. This effect was attributed to the polarization induced in the depletion layer by the mechanical stress. On this basis a model was developed which accounts for the experimental results.
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Lagowski, J., Gatos, H. C.. 1972-04-01. Surface piezoelectric effect in non-centrosymmetric semiconductors - CdS.. https://ntrs.nasa.gov/citations/19720044858
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