NASA NTRS · 19730000295
Silicon switching transistor with high power and low saturation voltage
Abstract
Assembly of two individually encapsulated silicon-chip transistors produces silicon power-transistor that has low electrical resistance and low thermal impedance. Electrical resistance and thermal impedance are low because of short lead lengths, and external contact surfaces are plated to reduce resistance at interfaces.
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Stonebraker, E., Stoneburner, D., Ferree, H.. 1973-07-01. Silicon switching transistor with high power and low saturation voltage. https://ntrs.nasa.gov/citations/19730000295
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