Development of gallium arsenide solar cells

Abstract

The potential of ion implantation as a means to the development of high efficiency gallium arsenide solar cells is investigated. Summaries are included of the results of computer calculations of GaAs cell characteristics, based on a model which includes the effects of surface recombination, junction space-charge region recombination, and built-in fields produced by nonuniform doping in the region; of the fabrication technology developed under the program; and of the results of electrical and optical measurements on the samples produced during the program. It was determined that measured AMO efficiencies were more than a factor of two lower than the calculated values.