Si(Li) position sensitive detector

Abstract

A position sensitive detector was made using the lithium diffused layer of a lithium-drifted-silicon detector as the uniform resistive layer. An expression is derived for estimating the resistance from the thickness of the lithium layer. Expressions for the noise and ballistic deficit for single differentiation-double integration pulse shaping are presented. Room temperature data for a 1 Mev proton beam on a 45 mm long detector shows that the linearity is better than .05% and that the position resolution is 1.06 + or - .05 mm.