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NASA NTRS · 19740054150

Strengthening silicon carbide by quenching

Abstract

Quenching was used to form compressive surface layers in hot-pressed silicon carbide. The presence of the compressive stresses was verified by slotted rod tests. The slotted rod tip deflection was retained at temperatures to at least 1380 C, showing that the stresses are not relieved immediately at elevated temperatures. The flexural strength and impact resistance of specimens quenched from moderate temperatures (2000 C) were increased. Frequently, specimens quenched from higher temperatures were weakened by thermal shock damage.

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Gruver, R. M., Platts, D. R., Kirchner, H. P.. 1974-07-01. Strengthening silicon carbide by quenching. https://ntrs.nasa.gov/citations/19740054150

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