NASA NTRS · 19750000125
Schottky barrier solar cell promises improved efficiency
Abstract
Higher current and higher voltage can be obtained by using Schottky barrier device with wide band-gap semiconductor as top layer and lower band-gap semiconductor underneath. Significant amount of solar radiation that is not absorbed by side band-gap material will be absorbed by narrow band-gap material.
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Stirn, R. J.. 1975-06-01. Schottky barrier solar cell promises improved efficiency. https://ntrs.nasa.gov/citations/19750000125
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