A 190 by 244 charge-coupled area image sensor with interline transfer organization

Abstract

A 190 x 244 element charge coupled area image sensor has been designed, fabricated and tested. This sensor employs an interline transfer organization and buried n-channel technology. It features a novel on-chip charge integrator and a distributed floating gate amplifier for high and low light level applications. The X-Y element count has been chosen to establish the capability of producing an NTSC compatible video signal. The array size is also compatible with the Super 8 lens format. The first few sample devices have been successfully operated at full video bandwidth for both high and low light levels with the charge amplifier system.