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NASA NTRS ยท 19760011263

Technological development of high energy density capacitors

Abstract

A study was conducted to develop cylindrical wound metallized film capacitors rated 2 micron F 500 VDC that had energy densities greater than 0.1J/g. Polysulfone (PS) and polyvinylidene (PVF2) were selected as dielectrics. Single film PS capacitors of 0.2J/g (uncased) were made of 3.75 micron material. Single film PVF2 capacitors of 0.19J/g (uncased) were made of 6.0 micron material. Corona measurements were made at room temperature, and capacitance and dissipation factor measurements were made over the ranges 25 C to 125 C and 120 Hz to 100 kHz. Nineteen of twenty PVF2 components survived a 2500 hour dc plus ac life test. Failure analyses revealed most failures occurred at wrinkles, but some edge failures were also seen. A 0.989g case was designed. When the case was combined with the PVF2 component, a finished energy density of 0.11J/g was achieved.

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BibTeXRIS

Parker, R. D.. 1976-02-01. Technological development of high energy density capacitors. https://ntrs.nasa.gov/citations/19760011263

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