NASA NTRS · 19760038801
Time-dependent MOS breakdown
Abstract
A general model for time-dependent breakdown in metal-oxide-silicon (MOS) structures is developed and related to experimental measurements on samples deliberately contaminated with Na. A statistical method is used for measuring the breakdown probability as a function of log time and applied field. It is shown that three time regions of breakdown can be explained respectively in terms of silicon surface defects, ion emission from the metal interface, and lateral ion diffusion at the silicon interface.
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Li, S. P., Bates, E. T., Maserjian, J.. 1976-03-01. Time-dependent MOS breakdown. https://ntrs.nasa.gov/citations/19760038801
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