NASA NTRS · 19770012372
Contract to design, fabricate and test an Electron Bombarded Semiconductor (EBS) device
Abstract
The characteristics of the low resistivity diode and the double epitaxial style diode are reported. Both met required breakdown voltage and capacitance voltage characteristics. The double epitaxial style diodes are expected to improve target efficiencies.
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Arnold, R. L.. 1976-01-01. Contract to design, fabricate and test an Electron Bombarded Semiconductor (EBS) device. https://ntrs.nasa.gov/citations/19770012372
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