NASA NTRS · 19770024462
Accelerated life testing effects on CMOS microcircuit characteristics
Abstract
Accelerated life tests were performed on CMOS microcircuits to predict their long term reliability. The consistency of the CMOS microcircuit activation energy between the range of 125 C to 200 C and the range 200 C to 250 C was determined. Results indicate CMOS complexity and the amount of moisture detected inside the devices after testing influences time to failure of tested CMOS devices.
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1977-07-01. Accelerated life testing effects on CMOS microcircuit characteristics. https://ntrs.nasa.gov/citations/19770024462
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